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VS-GT100TP60N

VS-GT100TP60N

VS-GT100TP60N

Vishay Semiconductor Diodes Division

IGBT 600V 160A 417W INT-A-PAK

SOT-23

VS-GT100TP60N Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 42 Weeks
Mount Chassis Mount
Mounting Type Chassis Mount
Package / Case INT-A-PAK (3 + 4)
Number of Pins 7
Operating Temperature 175°C TJ
Published 2015
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Max Power Dissipation 417W
Configuration Half Bridge
Power - Max 417W
Input Standard
Collector Emitter Voltage (VCEO) 2.1V
Max Collector Current 160A
Current - Collector Cutoff (Max) 5mA
Collector Emitter Breakdown Voltage 600V
Input Capacitance 7.71nF
Vce(on) (Max) @ Vge, Ic 2.1V @ 15V, 100A
IGBT Type Trench
NTC Thermistor No
Input Capacitance (Cies) @ Vce 7.71nF @ 30V
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $72.906000 $72.906
10 $68.779245 $687.79245
100 $64.886080 $6488.608
500 $61.213283 $30606.6415
1000 $57.748381 $57748.381

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