FPF2C8P2NL07A

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Manufacturer part number:FPF2C8P2NL07A

Manufacturer:ON Semiconductor

Description:FPF2C8P2NL07A datasheet pdf and Transistors - IGBTs - Modules product details from ON Semiconductor stock available on our website

Case Package:SOT-23

Datasheet:FPF2C8P2NL07A Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	4 Weeks
Mount	Through Hole
Mounting Type	Chassis Mount
Package / Case	F2 Module
Weight	45g
Operating Temperature	-40°C~150°C TJ
Published	2014
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
ECCN Code	EAR99
HTS Code	8542.39.00.01
Max Power Dissipation	135W
Peak Reflow Temperature (Cel)	NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Configuration	Three Phase
Power - Max	135W
Input	Standard
Collector Emitter Voltage (VCEO)	2.2V
Max Collector Current	30A
Current - Collector Cutoff (Max)	250μA
Collector Emitter Breakdown Voltage	650V
Isolation Voltage	2.5kV
Vce(on) (Max) @ Vge, Ic	2.2V @ 15V, 30A
IGBT Type	Field Stop
NTC Thermistor	Yes
RoHS Status	ROHS3 Compliant

Quantity	Unit Price	Ext. Price
1	$89.969489	$89.969489
10	$84.876876	$848.76876
100	$80.072525	$8007.2525
500	$75.540118	$37770.059
1000	$71.264262	$71264.262

FPF2C8P2NL07A Description

FPF2C8P2NL07A transistor is a MOS field-effect transistor designed to be used in signal applications. The special low thermal resistance packaging makes FPF2C8P2NL07A MOSFET suitable for ISM applications in which reliability and durability are essential. It has the common source configuration.

FPF2C8P2NL07A Features

Gold metalization

Excellent thermal stability

Common source configuration

Thermally enhanced packaging

FPF2C8P2NL07A Applications

ISM applications

DC large signal applications

Power factor correction

Electronic lamp ballasts

Flat panel display