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FQA33N10

  • FQA33N10
  • FQA33N10

FQA33N10

FQA33N10

ON Semiconductor

MOSFET N-CH 100V 36A TO-3P

SOT-23

FQA33N10 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mounting Type Through Hole
Package / Case TO-3P-3, SC-65-3
Supplier Device Package TO-3P
Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2000
Series QFET®
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 163W Tc
FET Type N-Channel
Rds On (Max) @ Id, Vgs 52mOhm @ 18A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1500pF @ 25V
Current - Continuous Drain (Id) @ 25°C 36A Tc
Gate Charge (Qg) (Max) @ Vgs 51nC @ 10V
Drain to Source Voltage (Vdss) 100V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±25V
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $7.880880 $7.88088
10 $7.434793 $74.34793
100 $7.013956 $701.3956
500 $6.616939 $3308.4695
1000 $6.242395 $6242.395

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