FQA33N10L

new-10%

Manufacturer part number:FQA33N10L

Manufacturer:ON Semiconductor

Description:MOSFET N-CH 100V 36A TO-3P

Case Package:SOT-23

Datasheet:FQA33N10L Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-3P-3, SC-65-3
Number of Pins	3
Supplier Device Package	TO-3P
Operating Temperature	-55°C~175°C TJ
Packaging	Tube
Published	2006
Series	QFET®
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Max Operating Temperature	175°C
Min Operating Temperature	-55°C
Voltage - Rated DC	100V
Technology	MOSFET (Metal Oxide)
Current Rating	36A
Power Dissipation-Max	163W Tc
Element Configuration	Single
Power Dissipation	163W
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	52mOhm @ 18A, 10V
Vgs(th) (Max) @ Id	2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	1630pF @ 25V
Current - Continuous Drain (Id) @ 25°C	36A Tc
Gate Charge (Qg) (Max) @ Vgs	40nC @ 5V
Rise Time	470ns
Drain to Source Voltage (Vdss)	100V
Drive Voltage (Max Rds On,Min Rds On)	5V 10V
Vgs (Max)	±20V
Fall Time (Typ)	120 ns
Turn-Off Delay Time	70 ns
Continuous Drain Current (ID)	36A
Gate to Source Voltage (Vgs)	20V
Drain to Source Breakdown Voltage	100V
Input Capacitance	1.63nF
Drain to Source Resistance	52mOhm
Rds On Max	52 mΩ
RoHS Status	RoHS Compliant
Lead Free	Lead Free