SI1417EDH-T1-E3

new-10%

Manufacturer part number:SI1417EDH-T1-E3

Manufacturer:Vishay Siliconix

Description:MOSFET 12V 3.3A 1.56W 85 mohms @ 4.5V

Case Package:SOT-23

Datasheet:SI1417EDH-T1-E3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	6-TSSOP, SC-88, SOT-363
Number of Pins	6
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2011
Series	TrenchFET®
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	6
ECCN Code	EAR99
Resistance	85MOhm
Terminal Finish	PURE MATTE TIN
Subcategory	Other Transistors
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
[email protected] Reflow Temperature-Max (s)	30
Pin Count	6
Number of Elements	1
Power Dissipation-Max	1W Ta
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	1W
Turn On Delay Time	600 ns
FET Type	P-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	85m Ω @ 3.3A, 4.5V
Vgs(th) (Max) @ Id	450mV @ 250μA (Min)
Current - Continuous Drain (Id) @ 25°C	2.7A Ta
Gate Charge (Qg) (Max) @ Vgs	8nC @ 4.5V
Rise Time	1.4μs
Drive Voltage (Max Rds On,Min Rds On)	1.8V 4.5V
Vgs (Max)	±12V
Fall Time (Typ)	1.4 μs
Turn-Off Delay Time	4.9 μs
Continuous Drain Current (ID)	-3.3A
Threshold Voltage	-450mV
Gate to Source Voltage (Vgs)	12V
Drain Current-Max (Abs) (ID)	2.7A
Drain to Source Breakdown Voltage	12V
Nominal Vgs	-450 mV
Height	900μm
Length	2.05mm
Width	1.25mm
Radiation Hardening	No
REACH SVHC	Unknown
RoHS Status	ROHS3 Compliant