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FQA8N80C

  • FQA8N80C
  • FQA8N80C

FQA8N80C

FQA8N80C

ON Semiconductor

MOSFET N-CH 800V 8.4A TO-3P

SOT-23

FQA8N80C Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mounting Type Through Hole
Package / Case TO-3P-3, SC-65-3
Supplier Device Package TO-3P
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2007
Series QFET®
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 220W Tc
FET Type N-Channel
Rds On (Max) @ Id, Vgs 1.55Ohm @ 4.2A, 10V
Vgs(th) (Max) @ Id 5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 2050pF @ 25V
Current - Continuous Drain (Id) @ 25°C 8.4A Tc
Gate Charge (Qg) (Max) @ Vgs 45nC @ 10V
Drain to Source Voltage (Vdss) 800V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $1.755482 $1.755482
10 $1.656116 $16.56116
100 $1.562373 $156.2373
500 $1.473937 $736.9685
1000 $1.390506 $1390.506

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