FQB19N20TM

new-10%

Manufacturer part number:FQB19N20TM

Manufacturer:ON Semiconductor

Description:Trans MOSFET N-CH 200V 19.4A 3-Pin(2+Tab) D2PAK T/R

Case Package:SOT-23

Datasheet:FQB19N20TM Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	4 Weeks
Lifecycle Status	ACTIVE (Last Updated: 16 hours ago)
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins	3
Weight	1.31247g
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Series	QFET®
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
ECCN Code	EAR99
Resistance	150mOhm
Terminal Finish	Tin (Sn)
Subcategory	FET General Purpose Power
Voltage - Rated DC	200V
Technology	MOSFET (Metal Oxide)
Terminal Form	GULL WING
Current Rating	19.4A
JESD-30 Code	R-PSSO-G2
Number of Elements	1
Power Dissipation-Max	3.13W Ta 140W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	3.13W
Case Connection	DRAIN
Turn On Delay Time	20 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	150m Ω @ 9.7A, 10V
Vgs(th) (Max) @ Id	5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	1600pF @ 25V
Current - Continuous Drain (Id) @ 25°C	19.4A Tc
Gate Charge (Qg) (Max) @ Vgs	40nC @ 10V
Rise Time	190ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±30V
Fall Time (Typ)	80 ns
Turn-Off Delay Time	55 ns
Continuous Drain Current (ID)	19.4A
Gate to Source Voltage (Vgs)	30V
Drain to Source Breakdown Voltage	200V
Pulsed Drain Current-Max (IDM)	78A
Avalanche Energy Rating (Eas)	250 mJ
Radiation Hardening	No
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free