2N7002PW,115

new-10%

Manufacturer part number:2N7002PW,115

Manufacturer:Nexperia USA Inc.

Description:MOSFET Operating temperature: -55...+150 °C Housing type: SOT-323 Polarity: N Power dissipation: 310 mW

Case Package:SOT-23

Datasheet:2N7002PW,115 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	4 Weeks
Contact Plating	Tin
Mounting Type	Surface Mount
Package / Case	SC-70, SOT-323
Surface Mount	YES
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2010
JESD-609 Code	e3
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
Resistance	1.6Ohm
Additional Feature	LOGIC LEVEL COMPATIBLE
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
[email protected] Reflow Temperature-Max (s)	30
Pin Count	3
Number of Elements	1
Power Dissipation-Max	260mW Ta
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	310mW
Turn On Delay Time	3 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	1.6 Ω @ 500mA, 10V
Vgs(th) (Max) @ Id	2.4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	50pF @ 10V
Current - Continuous Drain (Id) @ 25°C	310mA Ta
Gate Charge (Qg) (Max) @ Vgs	0.8nC @ 4.5V
Rise Time	4ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Fall Time (Typ)	4 ns
Turn-Off Delay Time	10 ns
Continuous Drain Current (ID)	310mA
Gate to Source Voltage (Vgs)	20V
Max Dual Supply Voltage	60V
Drain to Source Breakdown Voltage	60V
Radiation Hardening	No
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free