FQB20N06LTM

new-10%

Manufacturer part number:FQB20N06LTM

Manufacturer:ON Semiconductor

Description:MOSFET N-CH 60V 21A D2PAK

Case Package:SOT-23

Datasheet:FQB20N06LTM Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Supplier Device Package	D2PAK (TO-263AB)
Operating Temperature	-55°C~175°C TJ
Packaging	Tape & Reel (TR)
Published	2001
Series	QFET®
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Max Operating Temperature	175°C
Min Operating Temperature	-55°C
Voltage - Rated DC	60V
Technology	MOSFET (Metal Oxide)
Current Rating	21A
Power Dissipation-Max	3.75W Ta 53W Tc
Element Configuration	Single
Power Dissipation	3.75W
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	55mOhm @ 10.5A, 10V
Vgs(th) (Max) @ Id	2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	630pF @ 25V
Current - Continuous Drain (Id) @ 25°C	21A Tc
Gate Charge (Qg) (Max) @ Vgs	13nC @ 5V
Rise Time	165ns
Drain to Source Voltage (Vdss)	60V
Drive Voltage (Max Rds On,Min Rds On)	5V 10V
Vgs (Max)	±20V
Fall Time (Typ)	70 ns
Turn-Off Delay Time	35 ns
Continuous Drain Current (ID)	21A
Gate to Source Voltage (Vgs)	20V
Drain to Source Breakdown Voltage	60V
Input Capacitance	630pF
Drain to Source Resistance	55mOhm
Rds On Max	55 mΩ
RoHS Status	RoHS Compliant
Lead Free	Lead Free