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IRFH6200TR2PBF

IRFH6200TR2PBF

IRFH6200TR2PBF

Infineon Technologies

IRFH6200TR2PBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available on our website

SOT-23

IRFH6200TR2PBF Datasheet

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Specifications
Name Value
Type Parameter
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-PowerVDFN
Number of Pins 8
Supplier Device Package 8-PQFN (5x6)
Packaging Cut Tape (CT)
Published 2010
Series HEXFET®
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Resistance 1.2MOhm
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Max Power Dissipation 3.6W
Technology MOSFET (Metal Oxide)
Number of Elements 1
Element Configuration Single
Power Dissipation 156W
Turn On Delay Time 14 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 0.95mOhm @ 50A, 10V
Vgs(th) (Max) @ Id 1.1V @ 150μA
Input Capacitance (Ciss) (Max) @ Vds 10890pF @ 10V
Current - Continuous Drain (Id) @ 25°C 49A Ta 100A Tc
Gate Charge (Qg) (Max) @ Vgs 230nC @ 4.5V
Rise Time 74ns
Drain to Source Voltage (Vdss) 20V
Fall Time (Typ) 160 ns
Turn-Off Delay Time 140 ns
Continuous Drain Current (ID) 100A
Threshold Voltage 800mV
Gate to Source Voltage (Vgs) 12V
Drain to Source Breakdown Voltage 20V
Input Capacitance 10.89nF
Recovery Time 130 ns
Drain to Source Resistance 1.2mOhm
Rds On Max 950 μΩ
Nominal Vgs 800 mV
Height 838.2μm
Length 5.9944mm
Width 5mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status RoHS Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $5.644563 $5.644563
10 $5.325059 $53.25059
100 $5.023641 $502.3641
500 $4.739284 $2369.642
1000 $4.471022 $4471.022
IRFH6200TR2PBF Product Details

IRFH6200TR2PBF Description


IRFH6200TR2PBF emerges as a member of HEXFET? power MOSFET provided by Infineon Technologies. It is compatible with existing surface mount techniques, thus it can be manufactured in an easier way. Low thermal resistance to PCB (<0.8??C/W) enables better thermal dissipation. Low conduction losses can also be realized due to its low RDS (on) (?ü 0.99m|?). As a result, IRFH6200TR2PBF is well suited for hot-swap switches, charge, and discharge switches in battery applications, and load switches for 12 V buses.



IRFH6200TR2PBF Features


  • Increased reliability

  • Increased power density

  • Lower switching losses

  • Better thermal dissipation

  • Available in the PQFN package



IRFH6200TR2PBF Applications


  • Hot-swap switch

  • Load switch for 12 V bus

  • Charge and discharge switch in battery applications


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