FQB34N20TM-AM002

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FQB34N20TM-AM002

Manufacturer part number:FQB34N20TM-AM002

Manufacturer:ON Semiconductor

Description:MOSFET N-CH 200V 31A D2PAK

Case Package:SOT-23

Datasheet:FQB34N20TM-AM002 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	4 Weeks
Lifecycle Status	ACTIVE (Last Updated: 21 hours ago)
Contact Plating	Tin
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins	3
Weight	1.31247g
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Series	QFET®
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
Subcategory	FET General Purpose Power
Voltage - Rated DC	200V
Technology	MOSFET (Metal Oxide)
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Reach Compliance Code	not_compliant
Current Rating	31A
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
JESD-30 Code	R-PSSO-G2
Qualification Status	Not Qualified
Number of Elements	1
Power Dissipation-Max	3.13W Ta 180W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	3.13W
Case Connection	DRAIN
Turn On Delay Time	40 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	75m Ω @ 15.5A, 10V
Vgs(th) (Max) @ Id	5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	3100pF @ 25V
Current - Continuous Drain (Id) @ 25°C	31A Tc
Gate Charge (Qg) (Max) @ Vgs	78nC @ 10V
Rise Time	280ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±30V
Fall Time (Typ)	115 ns
Turn-Off Delay Time	125 ns
Continuous Drain Current (ID)	31A
Gate to Source Voltage (Vgs)	30V
Drain-source On Resistance-Max	0.075Ohm
Drain to Source Breakdown Voltage	200V
Avalanche Energy Rating (Eas)	640 mJ
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free