FQB6N60TM

new-10%

Manufacturer part number:FQB6N60TM

Manufacturer:ON Semiconductor

Description:MOSFET N-CH 600V 6.2A D2PAK

Case Package:SOT-23

Datasheet:FQB6N60TM Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Supplier Device Package	D2PAK (TO-263AB)
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2000
Series	QFET®
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Voltage - Rated DC	600V
Technology	MOSFET (Metal Oxide)
Current Rating	6.2A
Number of Elements	1
Power Dissipation-Max	3.13W Ta 130W Tc
Element Configuration	Single
Power Dissipation	3.13W
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	1.5Ohm @ 3.1A, 10V
Vgs(th) (Max) @ Id	5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	1000pF @ 25V
Current - Continuous Drain (Id) @ 25°C	6.2A Tc
Gate Charge (Qg) (Max) @ Vgs	25nC @ 10V
Rise Time	70ns
Drain to Source Voltage (Vdss)	600V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±30V
Fall Time (Typ)	45 ns
Turn-Off Delay Time	40 ns
Continuous Drain Current (ID)	6.2A
Gate to Source Voltage (Vgs)	30V
Drain to Source Breakdown Voltage	600V
Input Capacitance	1nF
Drain to Source Resistance	1.5Ohm
Rds On Max	1.5 Ω
RoHS Status	RoHS Compliant
Lead Free	Lead Free