TK72E12N1,S1X

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Manufacturer part number:TK72E12N1,S1X

Manufacturer:Toshiba Semiconductor and Storage

Description:MOSFET N-Ch 120V 179A 225W UMOSVIII 130nC .0044

Case Package:SOT-23

Datasheet:TK72E12N1,S1X Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	12 Weeks
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-220-3
Operating Temperature	150°C TJ
Packaging	Tube
Published	2014
Series	U-MOSVIII-H
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Technology	MOSFET (Metal Oxide)
Power Dissipation-Max	255W Tc
Element Configuration	Single
Power Dissipation	255W
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	4.4m Ω @ 36A, 10V
Vgs(th) (Max) @ Id	4V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds	8100pF @ 60V
Current - Continuous Drain (Id) @ 25°C	72A Ta
Gate Charge (Qg) (Max) @ Vgs	130nC @ 10V
Rise Time	33ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Fall Time (Typ)	37 ns
Turn-Off Delay Time	120 ns
Continuous Drain Current (ID)	72A
Gate to Source Voltage (Vgs)	20V
Drain to Source Breakdown Voltage	120V
RoHS Status	RoHS Compliant