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FQB8N60CTM-WS

  • FQB8N60CTM-WS
  • FQB8N60CTM-WS

FQB8N60CTM-WS

FQB8N60CTM-WS

ON Semiconductor

MOSFET N-CH 600V 7.5A

SOT-23

FQB8N60CTM-WS Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Series QFET®
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 3.13W Ta 147W Tc
FET Type N-Channel
Rds On (Max) @ Id, Vgs 1.2 Ω @ 3.75A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1255pF @ 25V
Current - Continuous Drain (Id) @ 25°C 7.5A Tc
Gate Charge (Qg) (Max) @ Vgs 36nC @ 10V
Drain to Source Voltage (Vdss) 600V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $70.398279 $70.398279
10 $66.413471 $664.13471
100 $62.654218 $6265.4218
500 $59.107753 $29553.8765
1000 $55.762031 $55762.031

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