IXFK36N60P

new-10%

Manufacturer part number:IXFK36N60P

Manufacturer:IXYS

Description:MOSFET N-CH 600V 36A TO-264

Case Package:SOT-23

Datasheet:IXFK36N60P Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	30 Weeks
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-264-3, TO-264AA
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2006
Series	HiPerFET™, PolarHT™
JESD-609 Code	e1
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
Terminal Finish	Tin/Silver/Copper (Sn/Ag/Cu)
Additional Feature	AVALANCHE RATED
Voltage - Rated DC	600V
Technology	MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Current Rating	36A
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Pin Count	3
Qualification Status	Not Qualified
Number of Elements	1
Power Dissipation-Max	650W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	650W
Case Connection	DRAIN
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	190m Ω @ 18A, 10V
Vgs(th) (Max) @ Id	5V @ 4mA
Input Capacitance (Ciss) (Max) @ Vds	5800pF @ 25V
Current - Continuous Drain (Id) @ 25°C	36A Tc
Gate Charge (Qg) (Max) @ Vgs	102nC @ 10V
Rise Time	25ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±30V
Fall Time (Typ)	22 ns
Turn-Off Delay Time	80 ns
Continuous Drain Current (ID)	36A
Gate to Source Voltage (Vgs)	30V
Drain-source On Resistance-Max	0.19Ohm
Drain to Source Breakdown Voltage	600V
Pulsed Drain Current-Max (IDM)	80A
Avalanche Energy Rating (Eas)	1500 mJ
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free