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IPP120N06NGAKSA1

IPP120N06NGAKSA1

IPP120N06NGAKSA1

Infineon Technologies

Trans MOSFET N-CH 60V 75A 3-Pin(3+Tab) TO-220

SOT-23

IPP120N06NGAKSA1 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2011
Series OptiMOS™
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish MATTE TIN
Additional Feature AVALANCHE RATED
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Peak Reflow Temperature (Cel) 260
Reach Compliance Code unknown
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 3
Qualification Status Not Qualified
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 158W Tc
Operating Mode ENHANCEMENT MODE
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 12m Ω @ 75A, 10V
Vgs(th) (Max) @ Id 4V @ 94μA
Input Capacitance (Ciss) (Max) @ Vds 2100pF @ 30V
Current - Continuous Drain (Id) @ 25°C 75A Tc
Gate Charge (Qg) (Max) @ Vgs 62nC @ 10V
Drain to Source Voltage (Vdss) 60V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Continuous Drain Current (ID) 75A
JEDEC-95 Code TO-220AB
Drain-source On Resistance-Max 0.012Ohm
DS Breakdown Voltage-Min 60V
Avalanche Energy Rating (Eas) 280 mJ
RoHS Status RoHS Compliant

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