FQH44N10

new-10%

Manufacturer part number:FQH44N10

Manufacturer:ON Semiconductor

Description:FQH44N10 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website

Case Package:SOT-23

Datasheet:FQH44N10 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mounting Type	Through Hole
Package / Case	TO-247-3
Surface Mount	NO
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tube
Published	2004
Series	QFET®
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Terminal Position	SINGLE
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Reach Compliance Code	not_compliant
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
JESD-30 Code	R-PSFM-T3
Qualification Status	Not Qualified
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	180W Tc
Operating Mode	ENHANCEMENT MODE
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	39m Ω @ 24A, 10V
Vgs(th) (Max) @ Id	4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	1800pF @ 25V
Current - Continuous Drain (Id) @ 25°C	48A Tc
Gate Charge (Qg) (Max) @ Vgs	62nC @ 10V
Drain to Source Voltage (Vdss)	100V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±25V
JEDEC-95 Code	TO-247AB
Drain Current-Max (Abs) (ID)	48A
Drain-source On Resistance-Max	0.039Ohm
Pulsed Drain Current-Max (IDM)	192A
DS Breakdown Voltage-Min	100V
Avalanche Energy Rating (Eas)	530 mJ
RoHS Status	RoHS Compliant