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FQI12N60CTU

  • FQI12N60CTU
  • FQI12N60CTU

FQI12N60CTU

FQI12N60CTU

ON Semiconductor

Trans MOSFET N-CH 600V 12A 3-Pin(3+Tab) I2PAK Rail

SOT-23

FQI12N60CTU Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mounting Type Through Hole
Package / Case TO-262-3 Long Leads, I2Pak, TO-262AA
Supplier Device Package I2PAK (TO-262)
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2007
Series QFET®
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 3.13W Ta 225W Tc
FET Type N-Channel
Rds On (Max) @ Id, Vgs 650mOhm @ 6A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 2290pF @ 25V
Current - Continuous Drain (Id) @ 25°C 12A Tc
Gate Charge (Qg) (Max) @ Vgs 63nC @ 10V
Drain to Source Voltage (Vdss) 600V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $6.500023 $6.500023
10 $6.132097 $61.32097
100 $5.784997 $578.4997
500 $5.457545 $2728.7725
1000 $5.148627 $5148.627

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