FQI7N80TU

new-10%

Manufacturer part number:FQI7N80TU

Manufacturer:ON Semiconductor

Description:MOSFET N-CH 800V 6.6A I2PAK

Case Package:SOT-23

Datasheet:FQI7N80TU Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	5 Weeks
Lifecycle Status	ACTIVE (Last Updated: 1 week ago)
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-262-3 Long Leads, I2Pak, TO-262AA
Weight	2.084g
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2013
Series	QFET®
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Terminal Finish	Tin (Sn)
Subcategory	FET General Purpose Power
Voltage - Rated DC	800V
Technology	MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Reach Compliance Code	not_compliant
Current Rating	6.6A
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
JESD-30 Code	R-PSIP-T3
Qualification Status	Not Qualified
Number of Elements	1
Power Dissipation-Max	3.13W Ta 167W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	3.13W
Turn On Delay Time	35 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	1.5 Ω @ 3.3A, 10V
Vgs(th) (Max) @ Id	5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	1850pF @ 25V
Current - Continuous Drain (Id) @ 25°C	6.6A Tc
Gate Charge (Qg) (Max) @ Vgs	52nC @ 10V
Rise Time	80ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±30V
Fall Time (Typ)	55 ns
Turn-Off Delay Time	95 ns
Continuous Drain Current (ID)	6.6A
Gate to Source Voltage (Vgs)	30V
Drain to Source Breakdown Voltage	800V
Pulsed Drain Current-Max (IDM)	26.4A
Avalanche Energy Rating (Eas)	580 mJ
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free