IRLML6302TRPBF

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IRLML6302TRPBF

Manufacturer part number:IRLML6302TRPBF

Manufacturer:Infineon Technologies

Description:MOSFET P-CH 20V 780MA SOT-23

Case Package:SOT-23

Datasheet:IRLML6302TRPBF Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	12 Weeks
Contact Plating	Tin
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-236-3, SC-59, SOT-23-3
Number of Pins	3
Transistor Element Material	SILICON
Manufacturer Package Identifier	Micro3
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2007
Series	HEXFET®
JESD-609 Code	e3
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
Termination	SMD/SMT
ECCN Code	EAR99
Resistance	600mOhm
Additional Feature	LOGIC LEVEL COMPATIBLE
Subcategory	Other Transistors
Voltage - Rated DC	-20V
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	GULL WING
Current Rating	-620mA
Number of Elements	1
Power Dissipation-Max	540mW Ta
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	540mW
Turn On Delay Time	13 ns
FET Type	P-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	600m Ω @ 610mA, 4.5V
Vgs(th) (Max) @ Id	1.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	97pF @ 15V
Current - Continuous Drain (Id) @ 25°C	780mA Ta
Gate Charge (Qg) (Max) @ Vgs	3.6nC @ 4.45V
Rise Time	18ns
Drive Voltage (Max Rds On,Min Rds On)	2.7V 4.5V
Vgs (Max)	±12V
Fall Time (Typ)	22 ns
Turn-Off Delay Time	22 ns
Continuous Drain Current (ID)	-780mA
Threshold Voltage	-1.5V
Gate to Source Voltage (Vgs)	12V
Drain Current-Max (Abs) (ID)	0.78A
Drain to Source Breakdown Voltage	-20V
Dual Supply Voltage	-20V
Nominal Vgs	-1.5 V
Min Breakdown Voltage	20V
Height	1.016mm
Length	3.0226mm
Width	1.397mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free