FQP19N20L

new-10%

Manufacturer part number:FQP19N20L

Manufacturer:ON Semiconductor

Description:MOSFET N-CH 200V 21A TO-220

Case Package:SOT-23

Datasheet:FQP19N20L Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-220-3
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2000
Series	QFET®
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Voltage - Rated DC	200V
Technology	MOSFET (Metal Oxide)
Current Rating	21A
Power Dissipation-Max	140W Tc
Element Configuration	Single
Power Dissipation	140W
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	140m Ω @ 10.5A, 10V
Vgs(th) (Max) @ Id	2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	2200pF @ 25V
Current - Continuous Drain (Id) @ 25°C	21A Tc
Gate Charge (Qg) (Max) @ Vgs	35nC @ 5V
Rise Time	300ns
Drive Voltage (Max Rds On,Min Rds On)	5V 10V
Vgs (Max)	±20V
Fall Time (Typ)	80 ns
Turn-Off Delay Time	130 ns
Continuous Drain Current (ID)	21A
Gate to Source Voltage (Vgs)	20V
Drain to Source Breakdown Voltage	200V
RoHS Status	RoHS Compliant
Lead Free	Lead Free