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FQP34N20L

  • FQP34N20L
  • FQP34N20L

FQP34N20L

FQP34N20L

ON Semiconductor

FQP34N20L datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website

SOT-23

FQP34N20L Datasheet

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Specifications
Name Value
Type Parameter
Mounting Type Through Hole
Package / Case TO-220-3
Supplier Device Package TO-220-3
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2000
Series QFET®
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 180W Tc
FET Type N-Channel
Rds On (Max) @ Id, Vgs 75mOhm @ 15.5A, 10V
Vgs(th) (Max) @ Id 2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 3900pF @ 25V
Current - Continuous Drain (Id) @ 25°C 31A Tc
Gate Charge (Qg) (Max) @ Vgs 72nC @ 5V
Drain to Source Voltage (Vdss) 200V
Drive Voltage (Max Rds On,Min Rds On) 5V 10V
Vgs (Max) ±20V
FQP34N20L Product Details

FQP34N20L  Description


The FQP34N20L is an N-Channel enhancement mode power MOSFET produced using ON Semiconductor Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been specially tailored to reduce on-state resistance and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched-mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.



FQP34N20L  Features


  • 31A, 200V, RDS(on) = 75mΩ(Max.) @VGS = 10 V, ID = 15.5A

  • Low gate charge ( Typ. 60nC)

  • Low Crss ( Typ. 55pF)

  • 100% avalanche tested



FQP34N20L  Applications


  • Other Audio & Video


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