ZXM64N035GTA

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ZXM64N035GTA

Manufacturer part number:ZXM64N035GTA

Manufacturer:Diodes Incorporated

Description:MOSFET N-CH 35V 6.7A SOT223

Case Package:SOT-23

Datasheet:ZXM64N035GTA Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-261-4, TO-261AA
Weight	7.994566mg
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2012
JESD-609 Code	e3
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	4
ECCN Code	EAR99
Terminal Finish	Matte Tin (Sn)
Additional Feature	LOW THRESHOLD
Voltage - Rated DC	35V
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
Reach Compliance Code	unknown
Current Rating	6.7A
[email protected] Reflow Temperature-Max (s)	40
Pin Count	4
JESD-30 Code	R-PDSO-G4
Qualification Status	Not Qualified
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Number of Channels	1
Power Dissipation-Max	2W Ta
Operating Mode	ENHANCEMENT MODE
Power Dissipation	2W
Case Connection	DRAIN
Turn On Delay Time	4.2 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	50m Ω @ 3.7A, 10V
Vgs(th) (Max) @ Id	1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	950pF @ 25V
Current - Continuous Drain (Id) @ 25°C	4.8A Ta 6.7A Tc
Gate Charge (Qg) (Max) @ Vgs	27nC @ 10V
Rise Time	4.6ns
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±20V
Fall Time (Typ)	8 ns
Turn-Off Delay Time	20.5 ns
Continuous Drain Current (ID)	6.7A
Gate to Source Voltage (Vgs)	20V
Drain Current-Max (Abs) (ID)	4.8A
Drain-source On Resistance-Max	0.05Ohm
Drain to Source Breakdown Voltage	35V
Height	1.65mm
Length	6.7mm
Width	3.7mm
RoHS Status	RoHS Compliant
Lead Free	Contains Lead