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FQP3N90

FQP3N90

FQP3N90

ON Semiconductor

MOSFET N-CH 900V 3.6A TO-220

SOT-23

FQP3N90 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mounting Type Through Hole
Package / Case TO-220-3
Supplier Device Package TO-220-3
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2000
Series QFET®
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 130W Tc
FET Type N-Channel
Rds On (Max) @ Id, Vgs 4.25Ohm @ 1.8A, 10V
Vgs(th) (Max) @ Id 5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 910pF @ 25V
Current - Continuous Drain (Id) @ 25°C 3.6A Tc
Gate Charge (Qg) (Max) @ Vgs 26nC @ 10V
Drain to Source Voltage (Vdss) 900V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.59000 $0.59
500 $0.5841 $292.05
1000 $0.5782 $578.2
1500 $0.5723 $858.45
2000 $0.5664 $1132.8
2500 $0.5605 $1401.25

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