FDFS2P102 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website
SOT-23
FDFS2P102 Datasheet
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Specifications
Name
Value
Type
Parameter
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
8-SOIC (0.154, 3.90mm Width)
Number of Pins
8
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2000
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Voltage - Rated DC
-20V
Technology
MOSFET (Metal Oxide)
Current Rating
-3.3A
Power Dissipation-Max
900mW Ta
Power Dissipation
2W
FET Type
P-Channel
Rds On (Max) @ Id, Vgs
125m Ω @ 3.3A, 10V
Vgs(th) (Max) @ Id
2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
270pF @ 10V
Current - Continuous Drain (Id) @ 25°C
3.3A Ta
Gate Charge (Qg) (Max) @ Vgs
10nC @ 10V
Rise Time
7ns
Drive Voltage (Max Rds On,Min Rds On)
4.5V 10V
Vgs (Max)
±20V
Fall Time (Typ)
7 ns
Turn-Off Delay Time
17 ns
Continuous Drain Current (ID)
3.3A
Threshold Voltage
-1.4V
Gate to Source Voltage (Vgs)
20V
Drain to Source Breakdown Voltage
-20V
FET Feature
Schottky Diode (Isolated)
REACH SVHC
No SVHC
RoHS Status
RoHS Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$2.673087
$2.673087
10
$2.521781
$25.21781
100
$2.379038
$237.9038
500
$2.244376
$1122.188
1000
$2.117336
$2117.336
FDFS2P102 Product Details
FDFS2P102 Discription
FDFS2P102 is a Integrated P-Channel MOSFET and Schottky Diode. SBD is named after its inventor, Dr. Schottky, and Schottky is an acronym for Schottky barrier diode. SBD is not made using the principle of forming PN junctions between P-type semiconductors and N-type semiconductors, but using the metal-semiconductor principle formed by the contact between metals and semiconductors.