SQM200N04-1M8_GE3

new-10%

Manufacturer part number:SQM200N04-1M8_GE3

Manufacturer:Vishay Siliconix

Description:MOSFET N-Chnl 40-V (D-S) AEC-Q101 Qualified

Case Package:SOT-23

Datasheet:SQM200N04-1M8_GE3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	12 Weeks
Mounting Type	Surface Mount
Package / Case	TO-263-7, D2Pak (6 Leads + Tab)
Surface Mount	YES
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tape & Reel (TR)
Published	2016
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	6
ECCN Code	EAR99
Technology	MOSFET (Metal Oxide)
Terminal Position	SINGLE
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
JESD-30 Code	R-PSSO-G6
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	375W Tc
Operating Mode	ENHANCEMENT MODE
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	1.8m Ω @ 30A, 10V
Vgs(th) (Max) @ Id	3.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	17350pF @ 25V
Current - Continuous Drain (Id) @ 25°C	200A Tc
Gate Charge (Qg) (Max) @ Vgs	310nC @ 10V
Drain to Source Voltage (Vdss)	40V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Drain Current-Max (Abs) (ID)	200A
Drain-source On Resistance-Max	0.0018Ohm
Pulsed Drain Current-Max (IDM)	600A
DS Breakdown Voltage-Min	40V
Avalanche Energy Rating (Eas)	361 mJ
RoHS Status	Non-RoHS Compliant
Lead Free	Lead Free