FQP55N06 Description
These N-channel enhanced power field effect transistors FQP55N06 are produced using Xiantong's proprietary planar stripe DMOS technology. This advanced technology is tailor-made to minimize on-resistance and provides excellent switching performance. Withstand high energy pulses in avalanche and rectifier modes. These devices are ideal for low voltage applications such as automobiles, DC DC converters, and high efficiency switches for power management in portable and battery powered products.
FQP55N06 Features
·55A,60VRDS(on)=0.020Ω@VGS=10V·Low gate charge(typical 35nC)·Low Crss(typical 85 pF)
·Fast switching
·100% avalanche tested.Improved dvidt capability
·175℃ maximum junction temperature rating
FQP55N06 Applications
Automobiles
DC DC converters
high efficiency switches for power management in portable and battery powered products.
