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FQP55N06

  • FQP55N06
  • FQP55N06

FQP55N06

FQP55N06

ON Semiconductor

FQP55N06 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website

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FQP55N06 Datasheet

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Specifications
Name Value
Type Parameter
Mounting Type Through Hole
Package / Case TO-220-3
Supplier Device Package TO-220-3
Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2001
Series QFET®
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 133W Tc
FET Type N-Channel
Rds On (Max) @ Id, Vgs 20mOhm @ 27.5A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1690pF @ 25V
Current - Continuous Drain (Id) @ 25°C 55A Tc
Gate Charge (Qg) (Max) @ Vgs 46nC @ 10V
Drain to Source Voltage (Vdss) 60V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±25V
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $1.31000 $1.31
500 $1.2969 $648.45
1000 $1.2838 $1283.8
1500 $1.2707 $1906.05
2000 $1.2576 $2515.2
2500 $1.2445 $3111.25
FQP55N06 Product Details

FQP55N06   Description


  These N-channel enhanced power field effect transistors FQP55N06 are produced using Xiantong's proprietary planar stripe DMOS technology. This advanced technology is tailor-made to minimize on-resistance and provides excellent switching performance. Withstand high energy pulses in avalanche and rectifier modes. These devices are ideal for low voltage applications such as automobiles, DC DC converters, and high efficiency switches for power management in portable and battery powered products.


FQP55N06    Features


·55A,60VRDS(on)=0.020Ω@VGS=10V·Low gate charge(typical 35nC)·Low Crss(typical 85 pF)

·Fast switching

·100% avalanche tested.Improved dvidt capability

·175℃ maximum junction temperature rating

 

FQP55N06    Applications


 Automobiles

 DC DC converters

 high efficiency switches for power management in portable and battery powered products.


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