BSB056N10NN3GXUMA1

new-10%

Manufacturer part number:BSB056N10NN3GXUMA1

Manufacturer:Infineon Technologies

Description:Trans MOSFET N-CH 100V 9A 7-Pin WDSON

Case Package:SOT-23

Datasheet:BSB056N10NN3GXUMA1 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	26 Weeks
Contact Plating	Silver
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	3-WDSON
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-40°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2011
Series	OptiMOS™
JESD-609 Code	e4
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	3 (168 Hours)
Number of Terminations	3
ECCN Code	EAR99
Technology	MOSFET (Metal Oxide)
Terminal Position	BOTTOM
Pin Count	3
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	2.8W Ta 78W Tc
Operating Mode	ENHANCEMENT MODE
Power Dissipation	2.8W
Case Connection	DRAIN
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	5.6m Ω @ 30A, 10V
Vgs(th) (Max) @ Id	3.5V @ 100μA
Halogen Free	Halogen Free
Input Capacitance (Ciss) (Max) @ Vds	5500pF @ 50V
Current - Continuous Drain (Id) @ 25°C	9A Ta 83A Tc
Gate Charge (Qg) (Max) @ Vgs	74nC @ 10V
Rise Time	9ns
Drive Voltage (Max Rds On,Min Rds On)	6V 10V
Vgs (Max)	±20V
Continuous Drain Current (ID)	9A
Threshold Voltage	2.7V
Gate to Source Voltage (Vgs)	20V
Max Dual Supply Voltage	100V
Drain Current-Max (Abs) (ID)	9A
Drain-source On Resistance-Max	0.0056Ohm
Avalanche Energy Rating (Eas)	450 mJ
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free