FQP5N50C datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website
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FQP5N50C Datasheet
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Specifications
Name
Value
Type
Parameter
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-220-3
Number of Pins
3
Weight
1.8g
Operating Temperature
-55°C~150°C TJ
Packaging
Tube
Published
2003
Series
QFET®
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Termination
Through Hole
Resistance
1.4Ohm
Voltage - Rated DC
500V
Technology
MOSFET (Metal Oxide)
Current Rating
5A
Number of Elements
1
Power Dissipation-Max
73W Tc
Element Configuration
Single
Power Dissipation
73W
Turn On Delay Time
12 ns
FET Type
N-Channel
Rds On (Max) @ Id, Vgs
1.4 Ω @ 2.5A, 10V
Vgs(th) (Max) @ Id
4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
625pF @ 25V
Current - Continuous Drain (Id) @ 25°C
5A Tc
Gate Charge (Qg) (Max) @ Vgs
24nC @ 10V
Rise Time
46ns
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±30V
Fall Time (Typ)
48 ns
Turn-Off Delay Time
50 ns
Continuous Drain Current (ID)
5A
Gate to Source Voltage (Vgs)
30V
Drain to Source Breakdown Voltage
500V
Dual Supply Voltage
500V
Nominal Vgs
4 V
Height
9.4mm
Length
10.1mm
Width
4.7mm
REACH SVHC
No SVHC
RoHS Status
RoHS Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.44000
$0.44
500
$0.4356
$217.8
1000
$0.4312
$431.2
1500
$0.4268
$640.2
2000
$0.4224
$844.8
2500
$0.418
$1045
FQP5N50C Product Details
FQP5N50C Description
FQP5N50C is a type of N-Channel QFET? MOSFET provided by ON Semiconductor based on the proprietary, planar stripe, DMOS technology. It is able to provide low on-state resistance, superior switching performance, and high avalanche energy strength. It is ideally suitable for switched-mode power supplies, electronic lamp ballasts, and active power factor correction.