PSMN3R9-60PSQ Overview

The maximum input capacitance of this device is 5600pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 130A.When VGS=60V, and ID flows to VDS at 60VVDS, the drain-source breakdown voltage is 60V in this device.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 62.7 ns.There is no pulsed drain current maximum for this device based on its rated peak drain current 705A.During device turn-on, the input capacitance must be charged for a period of time before drain current conduction can begin, so its delay time is 25.3 ns seconds.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.With its 60V power supply, it is capable of handling a dual voltage maximum.Using drive voltage (10V), this device helps reduce its power consumption.

PSMN3R9-60PSQ Features

a continuous drain current (ID) of 130A
a drain-to-source breakdown voltage of 60V voltage
the turn-off delay time is 62.7 ns
based on its rated peak drain current 705A.

PSMN3R9-60PSQ Applications

There are a lot of Nexperia USA Inc.
PSMN3R9-60PSQ applications of single MOSFETs transistors.

• Micro Solar Inverter
• DC/DC converters
• Power Tools
• Motor Drives and Uninterruptible Power Supples
• Synchronous Rectification
• Battery Protection Circuit
• Telecom 1 Sever Power Supplies
• Industrial Power Supplies
• PFC stages, hard switching PWM stages and resonant switching
• PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,