FQP6N50

new-10%

Manufacturer part number:FQP6N50

Manufacturer:ON Semiconductor

Description:MOSFET N-CH 500V 5.5A TO-220

Case Package:SOT-23

Datasheet:FQP6N50 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-220-3
Number of Pins	3
Supplier Device Package	TO-220-3
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2000
Series	QFET®
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Voltage - Rated DC	500V
Technology	MOSFET (Metal Oxide)
Current Rating	5.5A
Power Dissipation-Max	98W Tc
Element Configuration	Single
Power Dissipation	98W
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	1.3Ohm @ 2.8A, 10V
Vgs(th) (Max) @ Id	5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	790pF @ 25V
Current - Continuous Drain (Id) @ 25°C	5.5A Tc
Gate Charge (Qg) (Max) @ Vgs	22nC @ 10V
Rise Time	65ns
Drain to Source Voltage (Vdss)	500V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±30V
Fall Time (Typ)	45 ns
Turn-Off Delay Time	35 ns
Continuous Drain Current (ID)	5.5A
Gate to Source Voltage (Vgs)	30V
Drain to Source Breakdown Voltage	500V
Input Capacitance	790pF
Drain to Source Resistance	1.3Ohm
Rds On Max	1.3 Ω
RoHS Status	RoHS Compliant
Lead Free	Lead Free