FQP7N10 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website
SOT-23
FQP7N10 Datasheet
non-compliant
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Specifications
Name
Value
Type
Parameter
Mounting Type
Through Hole
Package / Case
TO-220-3
Supplier Device Package
TO-220-3
Operating Temperature
-55°C~175°C TJ
Packaging
Tube
Published
2000
Series
QFET®
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Technology
MOSFET (Metal Oxide)
Power Dissipation-Max
40W Tc
FET Type
N-Channel
Rds On (Max) @ Id, Vgs
350mOhm @ 3.65A, 10V
Vgs(th) (Max) @ Id
4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
250pF @ 25V
Current - Continuous Drain (Id) @ 25°C
7.3A Tc
Gate Charge (Qg) (Max) @ Vgs
7.5nC @ 10V
Drain to Source Voltage (Vdss)
100V
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±25V
FQP7N10 Product Details
FQP7N10 Description
FQP7N10 is a 100v N-channel MOSFET manufactured by onsemi. The onsemi N-Channel enhancement mode power field effect transistor is produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology FQP7N10 is specially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation modes. The FQP7N10 is well suited for low voltage applications such as audio amplifiers, high-efficiency switching DC/DC converters, and DC motor control.