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FQP7N10

FQP7N10

FQP7N10

ON Semiconductor

FQP7N10 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website

SOT-23

FQP7N10 Datasheet

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Specifications
Name Value
Type Parameter
Mounting Type Through Hole
Package / Case TO-220-3
Supplier Device Package TO-220-3
Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2000
Series QFET®
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 40W Tc
FET Type N-Channel
Rds On (Max) @ Id, Vgs 350mOhm @ 3.65A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 250pF @ 25V
Current - Continuous Drain (Id) @ 25°C 7.3A Tc
Gate Charge (Qg) (Max) @ Vgs 7.5nC @ 10V
Drain to Source Voltage (Vdss) 100V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±25V
FQP7N10 Product Details

FQP7N10 Description


FQP7N10 is a 100v N-channel MOSFET manufactured by onsemi. The onsemi N-Channel enhancement mode power field effect transistor is produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology FQP7N10 is specially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation modes. The FQP7N10 is well suited for low voltage applications such as audio amplifiers, high-efficiency switching DC/DC converters, and DC motor control.



FQP7N10 Features


  • 7.3A, 100V, RDS(on) = 0.35? @VGS = 10 V

  • Low gate charge ( typical 5.8 nC)

  • Low Crss ( typical 10 pF)

  • Fast switching

  • 100% avalanche tested

  • Improved dv/dt capability

  • 175°C maximum junction temperature rating



FQP7N10 Applications


  • Audio amplifiers

  • High-efficiency switching DC/DC converters

  • DC motor control


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