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IRF3315

IRF3315

IRF3315

Infineon Technologies

IRF3315 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available on our website

SOT-23

IRF3315 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mounting Type Through Hole
Package / Case TO-220-3
Surface MountNO
Transistor Element Material SILICON
Operating Temperature-55°C~175°C TJ
PackagingTube
Published 1997
Series HEXFET®
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PSFM-T3
Qualification StatusNot Qualified
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 136W Tc
Operating ModeENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 70m Ω @ 12A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1300pF @ 25V
Current - Continuous Drain (Id) @ 25°C 27A Tc
Gate Charge (Qg) (Max) @ Vgs 95nC @ 10V
Drain to Source Voltage (Vdss) 150V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
JEDEC-95 Code TO-220AB
Drain Current-Max (Abs) (ID) 27A
Drain-source On Resistance-Max 0.07Ohm
Pulsed Drain Current-Max (IDM) 108A
DS Breakdown Voltage-Min 150V
Avalanche Energy Rating (Eas) 350 mJ
RoHS StatusNon-RoHS Compliant
In-Stock:3612 items

IRF3315 Product Details

IRF3315 Description

The FDFS6N754 combines the exceptional performance of Farichild's PowerTrench MOSFET technology with a very low forward voltage drop Schottky barrier rectifier in a SO-8 package. This device is designed specifically as a single package solution for DC to DC converters. It features a fast switching, low gate charge MOSFET with very low on-state resistance. The independently connected Schottky diode allows its use in a variety of DC/DC converter topologies.



IRF3315 Features

Max fos(on)= 56m2 atVGs=OV, lb= 4A

Max rDs(on)= 75mQ2 atVss= 4.5V,Ib= 3.5A

Vp< 0.45V @ 2A

Vp< 0.28V @ 100mA

Schotky and MOSFET incorporated into single power

surface mount SO-8 package

Electically independent Schotky and MOSFET pinout

for deslign fexibilily

Low Gate Charge (Qg = 4nC)

Low Miller Charge



IRF3315 Applications

DC/DC converters



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