FQP90N10V2

new-10%

Manufacturer part number:FQP90N10V2

Manufacturer:ON Semiconductor

Description:MOSFET N-CH 100V 90A TO-220

Case Package:SOT-23

Datasheet:FQP90N10V2 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-220-3
Number of Pins	3
Supplier Device Package	TO-220-3
Operating Temperature	-55°C~175°C TJ
Packaging	Tube
Published	2005
Series	QFET®
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Termination	Through Hole
Resistance	10mOhm
Max Operating Temperature	175°C
Min Operating Temperature	-55°C
Voltage - Rated DC	100V
Technology	MOSFET (Metal Oxide)
Current Rating	90A
Number of Elements	1
Power Dissipation-Max	250W Tc
Element Configuration	Single
Power Dissipation	250W
Turn On Delay Time	52 ns
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	10mOhm @ 45A, 10V
Vgs(th) (Max) @ Id	4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	6150pF @ 25V
Current - Continuous Drain (Id) @ 25°C	90A Tc
Gate Charge (Qg) (Max) @ Vgs	191nC @ 10V
Rise Time	492ns
Drain to Source Voltage (Vdss)	100V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±30V
Fall Time (Typ)	355 ns
Turn-Off Delay Time	304 ns
Continuous Drain Current (ID)	90A
Gate to Source Voltage (Vgs)	30V
Drain to Source Breakdown Voltage	100V
Dual Supply Voltage	100V
Input Capacitance	6.15nF
Drain to Source Resistance	10mOhm
Rds On Max	10 mΩ
Nominal Vgs	4 V
Height	9.4mm
Length	10.1mm
Width	4.7mm
REACH SVHC	No SVHC
RoHS Status	RoHS Compliant
Lead Free	Lead Free