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SI4451DY-T1-GE3

SI4451DY-T1-GE3

SI4451DY-T1-GE3

Vishay Siliconix

MOSFET P-CH 12V 10A 8-SOIC

SOT-23

SI4451DY-T1-GE3 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 32 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Number of Pins 8
Weight 186.993455mg
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2012
Series TrenchFET®
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Subcategory Other Transistors
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Reach Compliance Code unknown
[email protected] Reflow Temperature-Max (s) 40
Pin Count 8
Qualification Status Not Qualified
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 1.5W Ta
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Turn On Delay Time 55 ns
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 8.25m Ω @ 14A, 4.5V
Vgs(th) (Max) @ Id 800mV @ 850μA
Current - Continuous Drain (Id) @ 25°C 10A Ta
Gate Charge (Qg) (Max) @ Vgs 120nC @ 4.5V
Drain to Source Voltage (Vdss) 12V
Drive Voltage (Max Rds On,Min Rds On) 1.8V 4.5V
Vgs (Max) ±8V
Fall Time (Typ) 235 ns
Turn-Off Delay Time 315 ns
Continuous Drain Current (ID) 10A
Gate to Source Voltage (Vgs) 8V
Drain to Source Breakdown Voltage -12V
RoHS Status ROHS3 Compliant

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