FQPF17N40

new-10%

Manufacturer part number:FQPF17N40

Manufacturer:ON Semiconductor

Description:FQPF17N40 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website

Case Package:SOT-23

Datasheet:FQPF17N40 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-220-3 Full Pack
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Series	QFET®
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Terminal Finish	Tin (Sn)
HTS Code	8541.29.00.95
Subcategory	FET General Purpose Power
Voltage - Rated DC	400V
Technology	MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Current Rating	16A
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Qualification Status	Not Qualified
Number of Elements	1
Power Dissipation-Max	56W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	56W
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	270m Ω @ 4.75A, 10V
Vgs(th) (Max) @ Id	5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	2300pF @ 25V
Current - Continuous Drain (Id) @ 25°C	9.5A Tc
Gate Charge (Qg) (Max) @ Vgs	60nC @ 10V
Rise Time	185ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±30V
Fall Time (Typ)	105 ns
Turn-Off Delay Time	90 ns
Continuous Drain Current (ID)	9.5A
Gate to Source Voltage (Vgs)	30V
Drain-source On Resistance-Max	0.27Ohm
Drain to Source Breakdown Voltage	400V
Avalanche Energy Rating (Eas)	1000 mJ
RoHS Status	RoHS Compliant
Lead Free	Lead Free