FQPF33N10

new-10%

Manufacturer part number:FQPF33N10

Manufacturer:ON Semiconductor

Description:FQPF33N10 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website

Case Package:SOT-23

Datasheet:FQPF33N10 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	4 Weeks
Lifecycle Status	ACTIVE (Last Updated: 1 week ago)
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-220-3 Full Pack
Number of Pins	3
Weight	2.27g
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tube
Published	2013
Series	QFET®
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Terminal Finish	Tin (Sn)
Subcategory	FET General Purpose Power
Voltage - Rated DC	100V
Technology	MOSFET (Metal Oxide)
Current Rating	18A
Number of Elements	1
Power Dissipation-Max	41W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	41W
Case Connection	ISOLATED
Turn On Delay Time	15 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	52m Ω @ 9A, 10V
Vgs(th) (Max) @ Id	4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	1500pF @ 25V
Current - Continuous Drain (Id) @ 25°C	18A Tc
Gate Charge (Qg) (Max) @ Vgs	51nC @ 10V
Rise Time	195ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±25V
Fall Time (Typ)	110 ns
Turn-Off Delay Time	80 ns
Continuous Drain Current (ID)	18A
Gate to Source Voltage (Vgs)	25V
Drain-source On Resistance-Max	0.052Ohm
Drain to Source Breakdown Voltage	100V
Pulsed Drain Current-Max (IDM)	72A
Radiation Hardening	No
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free