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FDH45N50F-F133

FDH45N50F-F133

FDH45N50F-F133

ON Semiconductor

MOSFET (Metal Oxide) N-Channel Tube 120m Ω @ 22.5A, 10V ±30V 6630pF @ 25V 137nC @ 10V 500V TO-247-3

SOT-23

FDH45N50F-F133 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Lifecycle Status ACTIVE (Last Updated: 1 day ago)
Factory Lead Time 6 Weeks
Mounting Type Through Hole
Package / Case TO-247-3
Surface Mount NO
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tube
Series UniFET™
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PSFM-T3
Qualification Status Not Qualified
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 625W Tc
Operating Mode ENHANCEMENT MODE
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 120m Ω @ 22.5A, 10V
Vgs(th) (Max) @ Id 5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 6630pF @ 25V
Current - Continuous Drain (Id) @ 25°C 45A Tc
Gate Charge (Qg) (Max) @ Vgs 137nC @ 10V
Drain to Source Voltage (Vdss) 500V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
JEDEC-95 Code TO-247AD
Drain Current-Max (Abs) (ID) 45A
Drain-source On Resistance-Max 0.12Ohm
Pulsed Drain Current-Max (IDM) 180A
DS Breakdown Voltage-Min 500V
Avalanche Energy Rating (Eas) 1868 mJ
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $7.49000 $7.49
10 $6.71600 $67.16
450 $5.02542 $2261.439
900 $4.11493 $3703.437
1,350 $3.85479 $3.85479
FDH45N50F-F133 Product Details

FDH45N50F-F133 Overview


As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 1868 mJ.CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 6630pF @ 25V.There is no drain current on this device since the maximum continuous current it can conduct is 45A.There is a peak drain current of 180A, its maximum pulsed drain current.In order for DS breakdown voltage to remain above 500V, it should remain above the 500V level.The transistor must receive a 500V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (10V).

FDH45N50F-F133 Features


the avalanche energy rating (Eas) is 1868 mJ
based on its rated peak drain current 180A.
a 500V drain to source voltage (Vdss)


FDH45N50F-F133 Applications


There are a lot of ON Semiconductor
FDH45N50F-F133 applications of single MOSFETs transistors.


  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
  • Lighting, Server, Telecom and UPS.

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