FQPF3N60 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website
SOT-23
FQPF3N60 Datasheet
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Specifications
Name
Value
Type
Parameter
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-220-3 Full Pack
Number of Pins
3
Operating Temperature
-55°C~150°C TJ
Packaging
Tube
Published
2000
Series
QFET®
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Voltage - Rated DC
600V
Technology
MOSFET (Metal Oxide)
Current Rating
2A
Number of Elements
1
Power Dissipation-Max
34W Tc
Element Configuration
Single
Power Dissipation
34W
FET Type
N-Channel
Rds On (Max) @ Id, Vgs
3.6 Ω @ 1A, 10V
Vgs(th) (Max) @ Id
5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
450pF @ 25V
Current - Continuous Drain (Id) @ 25°C
2A Tc
Gate Charge (Qg) (Max) @ Vgs
13nC @ 10V
Rise Time
30ns
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±30V
Fall Time (Typ)
30 ns
Turn-Off Delay Time
20 ns
Continuous Drain Current (ID)
2A
Threshold Voltage
5V
Gate to Source Voltage (Vgs)
30V
Drain to Source Breakdown Voltage
600V
REACH SVHC
No SVHC
RoHS Status
RoHS Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.46000
$0.46
500
$0.4554
$227.7
1000
$0.4508
$450.8
1500
$0.4462
$669.3
2000
$0.4416
$883.2
2500
$0.437
$1092.5
FQPF3N60 Product Details
FQPF3N60 Description
FQPF3N60 N-Channel power MOSFET is to be used in a variety of applications. FQPF3N60 MOSFET is ideal for reducing resistance to on-state and offering better switching performance as well as being able to provide high avalanche energy. ON Semiconductor FQPF3N60 is widely used in switched-mode power supplies, active power factor correction, and electronic lamp ballasts.