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IPA60R750E6XKSA1

IPA60R750E6XKSA1

IPA60R750E6XKSA1

Infineon Technologies

In a Pack of 10, N-Channel MOSFET, 5.7 A, 600 V, 3-Pin TO-220FP Infineon IPA60R750E6XKSA1

SOT-23

IPA60R750E6XKSA1 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 12 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3 Full Pack
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2008
Series CoolMOS™
JESD-609 Code e3
Pbfree Code yes
Part Status Not For New Designs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Terminal Finish Tin (Sn)
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 3
Qualification Status Not Qualified
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 27W Tc
Operating Mode ENHANCEMENT MODE
Power Dissipation 27W
Case Connection ISOLATED
Turn On Delay Time 9 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 750m Ω @ 2A, 10V
Vgs(th) (Max) @ Id 3.5V @ 170μA
Halogen Free Halogen Free
Input Capacitance (Ciss) (Max) @ Vds 373pF @ 100V
Current - Continuous Drain (Id) @ 25°C 5.7A Tc
Gate Charge (Qg) (Max) @ Vgs 17.2nC @ 10V
Rise Time 7ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 12 ns
Turn-Off Delay Time 50 ns
Continuous Drain Current (ID) 5.7A
JEDEC-95 Code TO-220AB
Gate to Source Voltage (Vgs) 20V
Max Dual Supply Voltage 600V
Drain-source On Resistance-Max 0.75Ohm
Avalanche Energy Rating (Eas) 72 mJ
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $10.617459 $10.617459
10 $10.016471 $100.16471
100 $9.449501 $944.9501
500 $8.914623 $4457.3115
1000 $8.410022 $8410.022

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