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FQPF3N90

  • FQPF3N90
  • FQPF3N90

FQPF3N90

FQPF3N90

ON Semiconductor

FQPF3N90 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website

SOT-23

FQPF3N90 Datasheet

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In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mounting Type Through Hole
Package / Case TO-220-3 Full Pack
Supplier Device Package TO-220F
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2000
Series QFET®
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 43W Tc
FET Type N-Channel
Rds On (Max) @ Id, Vgs 4.25Ohm @ 1.05A, 10V
Vgs(th) (Max) @ Id 5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 910pF @ 25V
Current - Continuous Drain (Id) @ 25°C 2.1A Tc
Gate Charge (Qg) (Max) @ Vgs 26nC @ 10V
Drain to Source Voltage (Vdss) 900V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $1.13000 $1.13
500 $1.1187 $559.35
1000 $1.1074 $1107.4
1500 $1.0961 $1644.15
2000 $1.0848 $2169.6
2500 $1.0735 $2683.75
FQPF3N90 Product Details

FQPF3N90   Description

  These N-channel enhanced mode power field effect transistors are programmed using rairchid's proprietary planar stripe DMOS technology. This advanced technology is tailor-made to minimize on-resistance and provides excellent switching performance. And withstand high energy pulses in avalanche and rectifier modes. These devices are very suitable for high efficiency switching power supplies.


FQPF3N90    Applications


high efficiency switching power supplies


FQPF3N90     Features


·2.1A,900VRDS(on=4.25Ω@VGs=10V

Low gate charge(typical 20nC)

·Low Crss(typical 8.0 pF)

.Fast switching

100% avalanche tested

·Improved dvidt capability


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