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TK7A65D(STA4,Q,M)

TK7A65D(STA4,Q,M)

TK7A65D(STA4,Q,M)

Toshiba Semiconductor and Storage

MOSFET N-CH 650V 7A TO-220SIS

SOT-23

TK7A65D(STA4,Q,M) Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 16 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3 Full Pack
Number of Pins 3
Supplier Device Package TO-220SIS
Operating Temperature 150°C TJ
Packaging Tube
Published 2011
Series π-MOSVII
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Technology MOSFET (Metal Oxide)
Number of Elements 1
Power Dissipation-Max 45W Tc
Power Dissipation 45W
FET Type N-Channel
Rds On (Max) @ Id, Vgs 980mOhm @ 3.5A, 10V
Vgs(th) (Max) @ Id 4V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 1200pF @ 25V
Current - Continuous Drain (Id) @ 25°C 7A Ta
Gate Charge (Qg) (Max) @ Vgs 24nC @ 10V
Rise Time 25ns
Drain to Source Voltage (Vdss) 650V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Fall Time (Typ) 12 ns
Continuous Drain Current (ID) 7A
Gate to Source Voltage (Vgs) 30V
Input Capacitance 1.2nF
Rds On Max 980 mΩ
Radiation Hardening No
RoHS Status RoHS Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $1.893199 $1.893199
10 $1.786036 $17.86036
100 $1.684940 $168.494
500 $1.589566 $794.783
1000 $1.499590 $1499.59

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