FQPF47P06YDTU datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website
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FQPF47P06YDTU Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
6 Weeks
Lifecycle Status
ACTIVE (Last Updated: 3 days ago)
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-220-3 Full Pack, Formed Leads
Number of Pins
3
Weight
2.565g
Operating Temperature
-55°C~175°C TJ
Packaging
Tube
Published
2015
Series
QFET®
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN Code
EAR99
Terminal Finish
Tin (Sn)
HTS Code
8541.29.00.95
Subcategory
Other Transistors
Technology
MOSFET (Metal Oxide)
Power Dissipation-Max
62W Tc
Element Configuration
Single
Power Dissipation
62W
Turn On Delay Time
50 ns
FET Type
P-Channel
Rds On (Max) @ Id, Vgs
26m Ω @ 15A, 10V
Vgs(th) (Max) @ Id
4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
3600pF @ 25V
Current - Continuous Drain (Id) @ 25°C
30A Tc
Gate Charge (Qg) (Max) @ Vgs
110nC @ 10V
Rise Time
450ns
Drain to Source Voltage (Vdss)
60V
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±25V
Fall Time (Typ)
195 ns
Turn-Off Delay Time
100 ns
Continuous Drain Current (ID)
30A
Gate to Source Voltage (Vgs)
25V
Drain to Source Breakdown Voltage
-60V
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
800
$1.60938
$1287.504
FQPF47P06YDTU Product Details
FQPF47P06YDTU Description
The FQPF47P06YDTU is a MOSFET – P-Channel, QFET®, -60 V, -30 A, 26 m. Onsemi's exclusive planar stripe and DMOS technologies are used to create this P-Channel enhancement mode power MOSFET. This cutting-edge MOSFET technology has been specifically designed to offer excellent switching performance, high avalanche energy strength, and reduced on-state resistance. These components are appropriate for applications requiring variable switching power, DC motor control, audio amplifier, and switched mode power supplies.
FQPF47P06YDTU Features
100% Avalanche Tested
175°C Maximum Junction Temperature Rating
−30 A, −60 V, RDS(on) = 26 m (Max.) @ VGS = −10 V, ID = −15 A