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HUFA76633S3S

HUFA76633S3S

HUFA76633S3S

ON Semiconductor

MOSFET N-CH 100V 38A D2PAK

SOT-23

HUFA76633S3S Datasheet

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In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins 3
Supplier Device Package D2PAK (TO-263AB)
Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2002
Series UltraFET™
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 175°C
Min Operating Temperature -55°C
Voltage - Rated DC 100V
Technology MOSFET (Metal Oxide)
Current Rating 38A
Power Dissipation-Max 145W Tc
Element Configuration Single
Power Dissipation 145W
FET Type N-Channel
Rds On (Max) @ Id, Vgs 35mOhm @ 39A, 10V
Vgs(th) (Max) @ Id 3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1820pF @ 25V
Current - Continuous Drain (Id) @ 25°C 39A Tc
Gate Charge (Qg) (Max) @ Vgs 67nC @ 10V
Rise Time 55ns
Drain to Source Voltage (Vdss) 100V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±16V
Fall Time (Typ) 83 ns
Turn-Off Delay Time 63 ns
Continuous Drain Current (ID) 39A
Gate to Source Voltage (Vgs) 16V
Drain to Source Breakdown Voltage 100V
Input Capacitance 1.82nF
Drain to Source Resistance 29mOhm
Rds On Max 35 mΩ
Radiation Hardening No
RoHS Status RoHS Compliant
Lead Free Lead Free

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