FQPF6N80T

new-10%

Manufacturer part number:FQPF6N80T

Manufacturer:ON Semiconductor

Description:Trans MOSFET N-CH 800V 3.3A 3-Pin(3+Tab) TO-220F Tube

Case Package:SOT-23

Datasheet:FQPF6N80T Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	7 Weeks
Lifecycle Status	ACTIVE (Last Updated: 1 week ago)
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-220-3 Full Pack
Number of Pins	3
Weight	2.27g
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2013
Series	QFET®
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Terminal Finish	Tin (Sn)
Additional Feature	UL RECOGNIZED
Subcategory	FET General Purpose Power
Voltage - Rated DC	800V
Technology	MOSFET (Metal Oxide)
Current Rating	3.3A
Number of Elements	1
Power Dissipation-Max	51W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	51W
Case Connection	ISOLATED
Turn On Delay Time	30 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	1.95 Ω @ 1.65A, 10V
Vgs(th) (Max) @ Id	5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	1500pF @ 25V
Current - Continuous Drain (Id) @ 25°C	3.3A Tc
Gate Charge (Qg) (Max) @ Vgs	31nC @ 10V
Rise Time	70ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±30V
Fall Time (Typ)	45 ns
Turn-Off Delay Time	65 ns
Continuous Drain Current (ID)	3.3A
JEDEC-95 Code	TO-220AB
Gate to Source Voltage (Vgs)	30V
Drain to Source Breakdown Voltage	800V
Avalanche Energy Rating (Eas)	680 mJ
Height	16.07mm
Length	10.36mm
Width	4.9mm
Radiation Hardening	No
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free