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FQPF7P06

  • FQPF7P06
  • FQPF7P06

FQPF7P06

FQPF7P06

ON Semiconductor

FQPF7P06 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website

SOT-23

FQPF7P06 Datasheet

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In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mounting Type Through Hole
Package / Case TO-220-3 Full Pack
Supplier Device Package TO-220F
Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2001
Series QFET®
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 24W Tc
FET Type P-Channel
Rds On (Max) @ Id, Vgs 410mOhm @ 2.65A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 295pF @ 25V
Current - Continuous Drain (Id) @ 25°C 5.3A Tc
Gate Charge (Qg) (Max) @ Vgs 8.2nC @ 10V
Drain to Source Voltage (Vdss) 60V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±25V
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $2.191232 $2.191232
10 $2.067200 $20.672
100 $1.950189 $195.0189
500 $1.839801 $919.9005
1000 $1.735661 $1735.661
FQPF7P06 Product Details

FQPF7P06 Description


FQPF7P06 is a type of P-Channel QFET? MOSFET provided by ON Semiconductor based on the proprietary, planar stripe, DMOS technology.  It is able to provide low on-state resistance and superior switching performance and withstand high energy pulse in the avalanche and commutation mode. It is ideally suitable for low voltage applications such as automotive, DC/DC converters, and high efficiency switching for power management in portable and battery-operated products.



FQPF7P06 Features


  • Low gate charge

  • Low on-state resistance

  • Superior switching performance

  • Improved dv/dt capability

  • Available in the TO-220F package



FQPF7P06 Applications


  • Automotive

  • DC/DC converters

  • High-efficiency switching


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