TP65H070LDG

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Manufacturer part number:TP65H070LDG

Manufacturer:Transphorm

Description:GaNFET (Cascode Gallium Nitride FET) N-Channel Tube 85m Ω @ 16A, 10V ±20V 600pF @ 400V 9.3nC @ 10V 650V 3-PowerDFN

Case Package:SOT-23

Datasheet:TP65H070LDG Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	12 Weeks
Mounting Type	Surface Mount
Package / Case	3-PowerDFN
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Series	TP65H070L
Part Status	Active
Moisture Sensitivity Level (MSL)	3 (168 Hours)
Technology	GaNFET (Cascode Gallium Nitride FET)
Power Dissipation-Max	96W Tc
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	85m Ω @ 16A, 10V
Vgs(th) (Max) @ Id	4.8V @ 700μA
Input Capacitance (Ciss) (Max) @ Vds	600pF @ 400V
Current - Continuous Drain (Id) @ 25°C	25A Tc
Gate Charge (Qg) (Max) @ Vgs	9.3nC @ 10V
Drain to Source Voltage (Vdss)	650V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V

Quantity	Unit Price	Ext. Price
1	$13.74000	$13.74
500	$13.6026	$6801.3
1000	$13.4652	$13465.2
1500	$13.3278	$19991.7
2000	$13.1904	$26380.8
2500	$13.053	$32632.5

TP65H070LDG Overview

A device's maximum input capacitance is 600pF @ 400V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.To operate this transistor, you need to apply a 650V drain to source voltage (Vdss).This device uses no drive voltage (10V) to reduce its overall power consumption.