FQPF8N60CYDTU

new-10%

Manufacturer part number:FQPF8N60CYDTU

Manufacturer:ON Semiconductor

Description:MOSFET 600V N-Ch Q-FET advance C-Series

Case Package:SOT-23

Datasheet:FQPF8N60CYDTU Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-220-3 Full Pack, Formed Leads
Number of Pins	3
Weight	2.565g
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2007
Series	QFET®
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Voltage - Rated DC	600V
Technology	MOSFET (Metal Oxide)
Current Rating	7.5A
Number of Elements	1
Power Dissipation-Max	48W Tc
Element Configuration	Single
Power Dissipation	48W
Turn On Delay Time	16.5 ns
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	1.2 Ω @ 3.75A, 10V
Vgs(th) (Max) @ Id	4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	1255pF @ 25V
Current - Continuous Drain (Id) @ 25°C	7.5A Tc
Gate Charge (Qg) (Max) @ Vgs	36nC @ 10V
Rise Time	60.5ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±30V
Fall Time (Typ)	64.5 ns
Turn-Off Delay Time	81 ns
Continuous Drain Current (ID)	7.5A
Gate to Source Voltage (Vgs)	30V
Drain to Source Breakdown Voltage	600V
Radiation Hardening	No
RoHS Status	RoHS Compliant
Lead Free	Lead Free