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NVHL080N120SC1

NVHL080N120SC1

NVHL080N120SC1

ON Semiconductor

NVHL080N120SC1 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website

SOT-23

NVHL080N120SC1 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 10 Weeks
Mounting Type Through Hole
Package / Case TO-247-3
Operating Temperature -55°C~175°C TJ
Series Automotive, AEC-Q101
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) Not Applicable
Terminal Finish Tin (Sn)
Technology SiCFET (Silicon Carbide)
Reach Compliance Code not_compliant
Power Dissipation-Max 348W Tc
FET Type N-Channel
Rds On (Max) @ Id, Vgs 110m Ω @ 20A, 20V
Vgs(th) (Max) @ Id 4.3V @ 5mA
Input Capacitance (Ciss) (Max) @ Vds 1670pF @ 800V
Current - Continuous Drain (Id) @ 25°C 44A Tc
Gate Charge (Qg) (Max) @ Vgs 56nC @ 20V
Drain to Source Voltage (Vdss) 1200V
Drive Voltage (Max Rds On,Min Rds On) 20V
Vgs (Max) +25V, -15V
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $17.82000 $17.82
10 $16.25900 $162.59
450 $12.74451 $5735.0295
900 $11.41680 $10275.12
NVHL080N120SC1 Product Details

NVHL080N120SC1 MOSFET Description


In comparison to Silicon, the NVHL080N120SC1 MOSFET has an entirely new technology that provides improved switching performance and higher reliability. Furthermore, the low ON resistance and small chip size guarantee low capacitance and gate charge.



NVHL080N120SC1 MOSFET Features


  • 1200V rated

  • Typical RDS(on) = 80mΩ

  • Max RDS(on) = 110mΩ at Vgs = 20V, Id = 20A

  • High-Speed Switching and Low Capacitance

  • 100% UIL Tested

  • Qualified for Automotive According to AEC?Q101  

  • Devices are Pb?Free and are RoHS Compliant



NVHL080N120SC1 MOSFET Applications


  • PFC

  • OBC

  • Automotive Auxiliary Motor Drive

  • Automotive On Board Charger

  • Automotive DC/DC converter for EV/PHEV

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