NVHL080N120SC1 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website
SOT-23
NVHL080N120SC1 Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
10 Weeks
Mounting Type
Through Hole
Package / Case
TO-247-3
Operating Temperature
-55°C~175°C TJ
Series
Automotive, AEC-Q101
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
Not Applicable
Terminal Finish
Tin (Sn)
Technology
SiCFET (Silicon Carbide)
Reach Compliance Code
not_compliant
Power Dissipation-Max
348W Tc
FET Type
N-Channel
Rds On (Max) @ Id, Vgs
110m Ω @ 20A, 20V
Vgs(th) (Max) @ Id
4.3V @ 5mA
Input Capacitance (Ciss) (Max) @ Vds
1670pF @ 800V
Current - Continuous Drain (Id) @ 25°C
44A Tc
Gate Charge (Qg) (Max) @ Vgs
56nC @ 20V
Drain to Source Voltage (Vdss)
1200V
Drive Voltage (Max Rds On,Min Rds On)
20V
Vgs (Max)
+25V, -15V
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$17.82000
$17.82
10
$16.25900
$162.59
450
$12.74451
$5735.0295
900
$11.41680
$10275.12
NVHL080N120SC1 Product Details
NVHL080N120SC1 MOSFET Description
In comparison to Silicon, the NVHL080N120SC1 MOSFET has an entirely new technology that provides improved switching performance and higher reliability. Furthermore, the low ON resistance and small chip size guarantee low capacitance and gate charge.