FQPF8P10

new-10%

Manufacturer part number:FQPF8P10

Manufacturer:ON Semiconductor

Description:MOSFET P-CH 100V 5.3A TO-220F

Case Package:SOT-23

Datasheet:FQPF8P10 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-220-3 Full Pack
Number of Pins	3
Operating Temperature	-55°C~175°C TJ
Packaging	Tube
Published	2002
Series	QFET®
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Voltage - Rated DC	-100V
Technology	MOSFET (Metal Oxide)
Current Rating	-5.3A
Power Dissipation-Max	28W Tc
Element Configuration	Single
Power Dissipation	28W
Turn On Delay Time	11 ns
FET Type	P-Channel
Rds On (Max) @ Id, Vgs	530m Ω @ 2.65A, 10V
Vgs(th) (Max) @ Id	4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	470pF @ 25V
Current - Continuous Drain (Id) @ 25°C	5.3A Tc
Gate Charge (Qg) (Max) @ Vgs	15nC @ 10V
Rise Time	110ns
Drain to Source Voltage (Vdss)	100V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±30V
Fall Time (Typ)	35 ns
Turn-Off Delay Time	20 ns
Continuous Drain Current (ID)	5.3A
Gate to Source Voltage (Vgs)	30V
Drain to Source Breakdown Voltage	-100V
Radiation Hardening	No
RoHS Status	RoHS Compliant
Lead Free	Lead Free